Accelerating Technology: New GaN Chip for Department of War Delivers on Performance in Record Time

Microscope photo of Northrop Grumman’s high-frequency GaN microwave chip. (Photo Credit: Northrop Grumman)

REDONDO BEACH, Calif. – June 9, 2026 – Northrop Grumman (NYSE: NOC) has unveiled a groundbreaking Gallium Nitride (GaN) chip that establishes a new benchmark for performance in both military and commercial domains. This innovative chip fully utilizes the W-band spectrum, enabling high-speed communication through microchips that can transmit and receive detailed information effectively. Developed and market-ready in less than six months, this advancement enhances military radar systems, providing secure data transmission via satellites and supporting future 5G and 6G connectivity.

The chip serves as a compact, highly efficient “brain” that amplifies wireless signals to provide clearer and faster communications, thereby ensuring secure military communications while offering improved connectivity for everyday devices. Its streamlined, low-cost architecture supplants larger, power-intensive equipment, positioning the U.S. at the leading edge of next-generation wireless technology.

Produced at Northrop Grumman’s semiconductor facility in California, this chip was developed in collaboration with the Microelectronics Commons California DREAMS hub, where Northrop Grumman plays a pivotal role. This effort is backed by the Office of the Under Secretary of War for Research and Engineering (OUSW(R&E)), highlighting an innovative industry-government-academia partnership aimed at keeping the nation at the forefront of microchip technology and delivering essential advancements to the field more rapidly.

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_{This prototype (or technology) was primarily supported by the Microelectronics Commons Program, a DoW initiative led by the CA DREAMS HUB, under award number N00164-23-9-G056.}

Source: Northrop Grumman (2026-06-09T18:58:00Z)